Calculations of Thermal Expansivity and Lattice Constant of GaN Using Integer and Noninteger n-Dimensional Debye Functions
Yazarlar (1)
Prof. Dr. Salih SAYGI
Tokat Gaziosmanpaşa Üniversitesi, Türkiye
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale |
| Dergi Adı | International Journal of Thermophysics |
| Dergi ISSN | 0195-928X Wos Dergi Scopus Dergi |
| Dergi Tarandığı Indeksler | SCI |
| Dergi Grubu | Q4 |
| Makale Dili | İngilizce |
| Basım Tarihi | 12-2012 |
| Cilt No | 33 |
| Sayı | 12 |
| Sayfalar | 2377 / 2381 |
| DOI Numarası | 10.1007/s10765-012-1344-4 |
| Özet |
| A theoretical model to calculate the thermal expansivity and lattice constant are described and used to evaluate the GaN semiconductor. This method is based on the use of integer and noninteger n-dimensional Debye functions for analytical evaluation of the thermal expansivity and lattice constant. The agreement between calculated and experimental values for GaN is generally satisfactory. © 2012 Springer Science+Business Media New York. |
| Anahtar Kelimeler |
| Binomial coefficient | Debye function | Gamma function | III-nitrides | Lattice constant | Semiconductors | Thermal expansivity |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| WoS | 1 |
| SCOPUS | 1 |
| Google Scholar | 1 |