Analytical investigation of thermodynamic properties of power electronic semiconductor materials      
Yazarlar (2)
Doç. Dr. Zafer DOĞAN Tokat Gaziosmanpaşa Üniversitesi, Türkiye
Tural Mehmetoğlu
Tokat Gaziosmanpaşa Üniversitesi, Türkiye
Makale Türü Özgün Makale
Makale Alt Türü SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale
Dergi Adı Journal of Computational Electronics
Dergi ISSN 1569-8025 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI-Expanded
Dergi Grubu Q2
Makale Dili Türkçe
Basım Tarihi 05-2024
Cilt No 23
Sayı 3
Sayfalar 507 / 515
DOI Numarası 10.1007/s10825-024-02167-4
Makale Linki https://doi.org/10.1007/s10825-024-02167-4
Özet
Theoretical and experimental investigations are critical for accurately investigating the structure and physical properties of semiconductors, allowing their widespread use in power electronic devices. The heat capacities are important thermal properties needed to examine the electronic and electrical properties of device materials. The specific heat capacities of power electronic semiconductors, such as (GaN) gallium nitride, (SiC) silicon carbide, (Ga2O3) gallium oxide, and diamond, have been evaluated theoretically using the recently developed Einstein–Debye approximation. On the grounds of the Einstein–Debye approach, the derived general analytical expression for the calculation of the heat capacities is valid for the entire temperature range. The calculation results are compared with the previously available experimental and theoretical data for illustrating the correctness of the method. The evaluation and literature analysis confirm the effectiveness of the proposed method. As seen from the comparison with various results reported in the literaure, the results obtained from this approach are convenient and competitive.
Anahtar Kelimeler
Einstein–Debye model | Motor drives | Power electronics | Semiconductors | Thermal properties | Transistors