Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors
Yazarlar (14)
Prof. Dr. Salih SAYGI
Tokat Gaziosmanpaşa Üniversitesi, Türkiye
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale |
| Dergi Adı | IEEE Electron Device Letters |
| Dergi ISSN | 0741-3106 Wos Dergi Scopus Dergi |
| Dergi Tarandığı Indeksler | SCI |
| Dergi Grubu | Q4 |
| Makale Dili | Türkçe |
| Basım Tarihi | 01-2003 |
| Cilt No | 24 |
| Sayı | 9 |
| Sayfalar | 541 / 543 |
| DOI Numarası | 10.1109/LED.2003.816574 |
| Makale Linki | http://dx.doi.org/10.1109/led.2003.816574 |
| Özet |
| We present the characteristics of a quarter-micron gate metal-insulator-semiconductor heterostructure field-effect transistor (MISHFET) with Si3N4 film as a gate insulator. A detailed comparison of the MISHFET and an identical geometry HFET shows them to have the same radio frequency (RF) power gain and cut-off frequency, while the MISHFET has much lower gatge-leakage currents and higher RF powers at operating frequencies as high as 26 GHz. The MISHFET gate-leakage currents are well below 100 pA at gate bias values from -10 V to +8 V. At zero gate bias, the drain saturation current is about 0.9 A/mm and it increases to 1.2 A/mm at +8 V gate bias. The output RF power of around 6 W/mm at 40 drain bias was found to be frequency independent in the range of 2 to 26 GHz. This power is 3 dB higher than that from HFET of the same geometry. The intrinsic cutoff frequency is ∼63 GHz for both the HFET and the MISHFET. This corresponds to an average effective electron velocity in the MISHFET channel of 9.9 × 106 cm/s. The knee voltage and current saturation mechanisms in submicron MISHFETs and heterostructure field-effect transistors (HFET) are also discussed. |
| Anahtar Kelimeler |
| FETs | GaN | Microwave power FETs | MIS devices | MODFETs |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| WoS | 84 |
| SCOPUS | 79 |
| Google Scholar | 115 |