Full Analytical Evaluation of the Einstein Relation for Disordered Semiconductors
Yazarlar (2)
Prof. Dr. Ebru ÇOPUROĞLU Tokat Gaziosmanpaşa Üniversitesi, Türkiye
Tural Mehmetoʇlu Tokat Gaziosmanpaşa Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | IEEE Transactions on Electron Devices (Q1) | ||
| Dergi ISSN | 0018-9383 Dergi Bilgileri (2015) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 05-2015 |
| Cilt / Sayı / Sayfa | 62 / 5 / 1580–1583 | DOI | 10.1109/TED.2015.2414474 |
| Makale Linki | http://ieeexplore.ieee.org/document/7079494/ | ||
| UAK Araştırma Alanları |
Atom, Molekül ve Lazer Fiziği
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| Özet |
| We present a simple analytical method for the evaluation of the Einstein relation for disordered semiconductors with exponential distribution of tail states. The proposed analytical method is based on the binomial expansion theorems, and the calculation result permitted an accurate evaluation of the validity of the analytical approximation, as well as further improvement of the theoretical formulas. The accuracy and the efficiency of the obtained formulas of the Einstein relation for disordered semiconductors are demonstrated with the comparison of the numerical and analytical results. The formulas can be used to analyze the experimental results. |
| Anahtar Kelimeler |
| Binomial expansion theorems | disordered semiconductors | Einstein relation. |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Yöksis | 21 |
| Scopus | 17 |
| Google Scholar | 25 |